Due to the optimized gate oxide thickness our gate oxide screening is a lot more efficient compared to competing SiC MOSFET manufacturers. For off state stress protection by deep p-areas is adopted, for on-state a thick oxide is employed to be able to circumvent the bounds to screen remaining extrinsic https://www.facebook.com/permalink.php?story_fbid=pfbid0VCARyNTxLQN8hADkVfrhkW4wGZovySkKkrVrvNWaDKt4A6wDueGSLFr7dSah3zWDl&id=61560512640678&__cft__[0]=AZX1XKgfkza3ybh0dgXN7DIN3AQ1zHwKM2J5m0GuBCiUlnDa9UAYG5n-yrsmrB-WRPkyvTmpnErYcGlcQK89f27L0DrSRF3_XV7Eybw7oOHAmohQFFOxB32l79W6GsjjUjSD4m6vEHEkDy-rgpBasq-Rue_QQKaXnivpkwo-kb_YC1oCIdS0gSZ2yfJrmQezs7GsMc1TIFAZ2oGbW-IsnTOm&__tn__=%2CO%2CP-R